Synthesis and Characterization of One-dimensional Gallium Oxide and Zinc Gallate Nanostructures for Field Emission Applications

• Main Authors: Chih-Cheng Tseng, 曾至成
• Other Authors: Li-Chia Tien
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/33623624076795581659

碩士 === 國立東華大學 === 材料科學與工程學系 === 99 === The synthesis and characterization of field emission property of one-dimensional gallium oxide, zinc gallate nanostructures were reported. One-dimensional gallium oxide nanostructures were synthesized on silicon by a vapor transport method with different ambient oxygen (1%、5% 、10% 、15%), via vapor-liquid-solid (VLS) mechanism. Cathodoluminescence results shows one-dimensional gallium oxide nanostructures were with good luminescence property. With increasins ambient oxygen, gallium vacancies and gallium-oxygen vacancy pairs increased. The numbers of acceptor level increased, cause a high turn-on field, and a low field enhancement factor (β). A vapor transport process with controlled zinc evaporation temperature (500-800oC) has been used to synthesize zinc gallate nanostructures.X-ray diffraction (XRD), energy dispersive x-ray spectrometer (EDS) and transmission electron microscopy (TEM) results show that single phase one-dimensional zinc gallate nanosturctures were obtained when zinc evaporation temperature was controlled between 600-700oC. Photoluminescence results show a strong emission located at 532 nm due to oxygen defects. The turn-on field was 6.29 V/μm with a field emission enhancement factor (β) of 1297, suggesting it can be used as field-emitter. The photocatalytic activity of zinc gallate nanostructures were evaluated with degradation of methylene blue. It has good photocatalytic activity.