Device Simulation of Thin-Film Compound Tandem Solar Cells

• Main Authors: Chuan-You Ting, 丁銓佑
• Other Authors: Chia-Hua Huang
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/01066205702843965878

碩士 === 國立東華大學 === 電機工程學系 === 99 === The device modeling and numerical simulation for a monolithically stacked CuGaSe2/Cu(In,Ga)Se2 tandem solar cell with a double graded CIGS bottom cell and a CGS top cell have been carried out using a device simulation tool of SILVACO TCAD ATLAS. The baseline device modeling of the CIGS and CGS solar cells was established. The effects of the buffer thickness, ZnO thickness, bandgap grading of CIGS absorbers, and MoSe2 layers on the current-voltage characteristics of CIGS solar cells were studied. The effects of CGS thickness on the current-voltage characteristics of CGS solar cells were studied. The effects of CGS absorber thickness and CIGS absorber bandgap on the performance of CGS/CIGS tandem solar cells were investigated. The F.F. of the CIGS solar cells was found to decrease with the increase of the CdS buffer thickness. Double bandgap grading structure of CIGS absorbers greatly increase the open-circuit voltage and short-circuit current density. It has been found that the efficiency of CGS/CIGS tandem solar cells increased with the increase of CGS film thickness.