Characterization of GaN grown on tilt-cut γ-LiAlO 2 by molecular beam epitaxy for different growth temperatures
碩士 === 國立中山大學 === 物理學系研究所 === 99 === We study the properties of m-plane GaN structure on LiAlO 2 substrate grown by plasma-assisted molecular-beam epitaxy (PAMBE). Lattice parameters of LiAlO 2 are close to GaN, the interface between LiAlO 2 and GaN showed a good lattice matching. Low lattice m...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/3b88hc |