A 3.1~10.6 GHz UWB Low Noise Amplifier

碩士 === 國立中山大學 === 電機工程學系研究所 === 99 === The main contents of this thesis are improving a UWB LNA, and analyze the input-matching, the noise, and the gain. First we increase the width of the input transistor, and remove source-degeneration inductor. Those ways can increase the gain and reduce the nois...

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Bibliographic Details
Main Authors: Yi-Lung Hsieh, 謝宜龍
Other Authors: Chia-Hsiung Kao
Format: Others
Language:en_US
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/49031754175145720302
Description
Summary:碩士 === 國立中山大學 === 電機工程學系研究所 === 99 === The main contents of this thesis are improving a UWB LNA, and analyze the input-matching, the noise, and the gain. First we increase the width of the input transistor, and remove source-degeneration inductor. Those ways can increase the gain and reduce the noise of the circuit. In the input matching, we use a shunt capacitor, a series inductor, and the impedance of the transistor itself to achieve high frequency matching. The lower frequency matching is achieved by negative feedback resistor. The UWB LNA dissipates 10.14 mW power and achieves input return loss (S11) below -11.5 dB, output return loss (S22) below -11.9 dB, forward gain (S21) of 14.4±0.4 dB, reverse isolation (S12) below -26.7 dB, and noise figure (NF) of 2.6~3.5 dB over the 3.1~10.6 GHz band of interest. 1-dB compression point (P1dB) of -16.8 dBm and input third-order inter-modulation point (IIP3) of -8.1 dBm are achieved at 6.85 GHz.