A Study of the Optoelectical Properties of InGaAs/InAlAs Heterostructure
碩士 === 國立清華大學 === 電子工程研究所 === 99 === Abstract In this paper, we study the electrical and optical properties of the InGaAs/InAlAs hetero-structure quantum wells, including strained effect, split-off bands, the effects of free-carrier screening and the doping effect. We have studied the change of the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26954286085416145916 |