Fabrication of patterned sapphire substrate and high-efficiency GaN Light-emitting diodes by ICP dry etching
碩士 === 國立臺南大學 === 光電工程研究所 === 99 === In the first study, varied baking and oven temperature would make PR for hardness improved between ICP etching process, the selectivity of PSS over PR was improved from 1.02 to 1.1. The reason is that high temperature would make bonding strength be stronger than...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36072354821097539342 |