Growth and characterization of one-dimensional ZnO nanostructures by thermal oxidation of metallic zinc films

• Main Authors: Sung-Yu Tsai, 蔡松諭
• Other Authors: Liang-chiun chao
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/55zhz9

碩士 === 國立臺灣科技大學 === 電子工程系 === 99 === ZnO nanowires have been successfully grown by thermal oxidation of polycrystalline zinc films. ZnO nanowire length, diameter and wire density were found to be dependent strongly on zinc film crystallinity, oxidation temperature and oxidation time. Experimental results show that a polycrystalline zinc film is suitable for growth of vertically aligned ZnO nanowires. The growth mechanism of the nanowire is dominated by diffusion mechanism that oxidation at 450?aC results ZnO nanowires with the best field emission properties. Room temperature photoluminescence study shows a strong near-band-edge emission at 376.8 nm with a full-width-at-half maximum of 100 meV and negligible deep level emission. ZnO nanowire prepared under these conditions exhibit a turn on field of 4.5 V/?慆 and a field enhancement factor of 1834. A target current density of 0.75 mA/cm2 is achieved with a bias field less than 9 V/?慆.