| Summary: | 碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 99 === Wide-band-gap Transparent and amorphous oxide semiconductors are promising functional components for next-generation devices. This dissertation describes the fabrication and characterization of optoelectronic devices (photodetector (PDs) and transistors) with a-InGaZnO and ZnO nanorod (NR) networks. This main investigation is divided into two parts.
First (Material and PD Characteristics), we studied the optical and electrical properties of the a-InGaZnO and ZnO nanostructures materials. The active layers were deposited by radio frequency magnetron sputtering (rf-sputtering) approach and hydrothermal solution. Transmission, absorption, X-ray diffraction (XRD), atomic force microscopy (AFM), and field-emission scanning electron microscopy (FE-SEM) were then utilized to characterize the optical and crystallographic properties of the ZnO NRs. The a-InGaZnO and ZnO film PDs were also fabricated on glass substrates. Experimental results indicate that a-InGaZnO PDs have lower leakage current and higher UV-to-visible rejection ratio than the other ZnO film PDs.
Second (Transistors Characteristics), we fabricate top-gate structure using a-InGaZnO film as an active channel layer and deposited onto SiO2/p++-Si substrates by rf magnetron sputter deposition. In order to find the optimum performance, a-InGaZnO transistors with different thicknesses of the active layer, and annealing were fabricated and investigated. Additionally, we also describe the top-contact-type self-assembling ordered ZnO NR network transistors with a poly (methyl methacrylate) (PMMA) gate dielectric on a glass substrate. The NR networks were selectively grown in channel layer between the source and drain electrodes. The NR networks can provide additional electrical conducting path. The experimental results reveal the channel conductance of ZnO NR networks transistors can be manipulated by changing the drain and gate voltages. However, the proposed devices are expected to have potential extensive applications in next-generation optoelectronic devices.
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