Synthesis of ZnO:Al Transparent Conductive Thin Films Using Sol-Gel Method

• Main Authors: You-Gang Hsu, 許佑綱
• Other Authors: Shu- Huei Hsieh
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/7znn8w

碩士 === 國立虎尾科技大學 === 材料科學與綠色能源工程研究所 === 99 === Tin-doped indium oxide (ITO) deposited by vacuum process with excellent optical and electrical properties have been generally used as transparent conductive oxide thin films. In view of high cost and recycles not easily of vacuum process, zinc oxide films synthesized by wet chemical process is therefore regarded a more suitable candidate to replace ITO. In this work , sol-gel method was used to synthesis transparent aluminum doped zinc oxide (ZnO : Al, AZO) with 450 nm thickness for large scale production of CIGS solar cell. The experimental parameters contained different solvents, the usually used solvent ethylene glycol monomethyl ether (EGME) and the propylene glycol methyl ether (PGME), the amount of doping Al ranged from 0 to 2 at %, and various annealing temperature. The structure, electrical and optical properties of AZO thin films are investigated by a field emission scanning electron microscope (FE-SEM), X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS), four-point probe (FPP) and ultraviolet visible light spectroscope (UV/VIS). The experimental results showed the AZO films were Spiauterite crystalline with C axis preferred orientation and had above 80% transmittance and lower electrical resistivity after annealed twice in N2 atmosphere for one hour. The optimum AZO samples had low electrical resistivity 1.9×10-2 Ω-cm, which were synthesized with PGME solvent, doping 1 at% Al and annealed at 600 ℃ in N2 atmosphere and 500 ℃ in 95 N2/5H2 atomosphere for one hour, separately.