Characterization and Fabrication of ZnO:Al and ZnO:Ga Transparent Conductive Films

• Main Authors: Yu Cheng Tung, 董祐成
• Other Authors: K.Lin
• Format: Others
• Language: zh-TW
• Published: 100
• Online Access: http://ndltd.ncl.edu.tw/handle/28233029122689049871

碩士 === 南台科技大學 === 奈米科技研究所 === 99 === The goal of this study is to investigate the influences of the sol concentration, laser annealing and surface plasma resonance (SPR) effects on the opto-electrical properties of ZnO:Al(AZO) and ZnO:Ga (GZO) thin films prepared by the sol-gel method. To study the influence of the sol concentration, acetate dehydrate of different concentrations was prepared to reduce the coating number of film layers. The study on the influences of the laser annealing is divided into two parts. First, films prepared by adding a small amount of gallium trichloride (GaCl3) were compared with films prepared by a fixed amount of doping on their electrical properties and transmittance. Second, to have a fixed number of layers, the opto-electrical properties of specimens before and after the laser annealing were discussed. To study the influence of the SPR effects, after annealing, the GZO films were sputtered with different thicknesses of Ag films. After that, GZO layers were added to the GZO/Ag films to form a sandwich structure GZO/Ag/GZO. Then, the opto-electrical properties of the original GZO films, the GZO/Ag films, and these GZO/Ag/GZO films are compared. It is found that films prepared with sol solution of high concentration have obvious absorption phenomenon in the near infrared region. The probability of its application to low-E glass can therefore be further studied. The SEM images show that after the laser annealing, the surface of the films is already damaged at a laser power of 0.5W. The higher the emitting energy at the surface, the more serious is the damage. Thus, the electrical properties become worse. In terms of SPR effects, multi-layer can make the films become thicker and finer. However, if the film is too thick, the pores and the grain boundaries will increase. Thus, the energy barrier and the traps density for catching carriers also increase. As a result, the sheet resistance rises. Since the conductivity of the GZO is not as good as the Ag metal layer, the GZO/Ag/GZO structure can improve the transmittance, but the conductivity is reduced.