| Summary: | 碩士 === 國立臺北科技大學 === 光電工程系研究所 === 99 === In this dissertation, cuprous oxide(Cu2O) films were prepared by thermal oxidation using the Cu films were prepared by RF reactive magnetron sputtering, and changing the temperature and time of annealing to obtain the different performances of Cu2O thin films, After that, deposition of indium zinc oxide (IZO) by RF reactive magnetron sputtering on the Cu2O films to fabricated IZO/Cu2O heterostructure solar cells.
For the analyses of thin films, elements,composition and surface structure of p-Cu2O and n-IZO thin films were characterized by SEM and XRD measurements. Mobility,carrier concentrations and resistances of p-Cu2O and n-IZO thin films were measured by and Hall measurement.
For the analysis of solar cells,use In to be the metal electrode for I-V measurement. Performance of IZO/Cu2O heterostructure solar cells were compared. The best results were Voc = 0.05 V、Isc = 0.00705 mA/cm2、FF = 0.447 and η = 0.00158 % for the solar cell with 1.1 μm p-Cu2O by thermal oxidation on 500℃ in 10 minutes.
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