Design of High-Gain Mixer and Low-Voltage Flyback Converter for LTE Transmitter

碩士 === 國立臺北科技大學 === 電腦與通訊研究所 === 99 === The first part of this thesis presents a high-gain double-balanced mixer using linearity enhancement techniques. The mixer is an important issue for high-frequency integrated circuit. The proposed mixer not only decreases power consumption, cost and chip area,...

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Bibliographic Details
Main Authors: Cheng-Wei Lin, 林正偉
Other Authors: Yuh-Shyan Hwang
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/378p3f
Description
Summary:碩士 === 國立臺北科技大學 === 電腦與通訊研究所 === 99 === The first part of this thesis presents a high-gain double-balanced mixer using linearity enhancement techniques. The mixer is an important issue for high-frequency integrated circuit. The proposed mixer not only decreases power consumption, cost and chip area, but also increases extra value of mixer. The double-balanced technique not only improves linearity and conversion gain of mixer, but also has better port-to-port isolated ability which can avoid local oscillator feed through, dc offset and self-mixing. Besides, linearity enhancement techniques are adopted to improve mixer linearity. The proposed circuit has been fabricated with TSMC 0.18μm CMOS 1P6M processes, the total chip area is 0.87 x 1.146 mm2 (include PADs). The supply voltage is 1.8V, and the operating frequency is 2GHz and conversion gain is 16.212dB. The second part which is a low-voltage flyback converter using average- current-controlled techniques is present in this thesis. The average-current-controlled technique is used to achieve fast transient response and higher efficiency, and the controlled circuitwhich is simple can reduce cost. The proposed flyback converter uses synchronoustopology, instead of the conventional topology, the synchronous flyback converter replaces the secondary side output diode with a power NMOS which causes lower power consumption. The proposed circuit has been fabricated with TSMC 0.35μm CMOS 2P4M processes, the total chip area is 2.46 x 2.1mm2 (include PADs). The supply voltage is 1.5V, and the regulated output voltage ranges is from 1V-3V and switching frequency is 1MHz.