Fabrication of Carbon Nanotube Field Effect Transistors With Self-Aligned Gate Dielectric
碩士 === 大同大學 === 光電工程研究所 === 99 === In this paper, We fabricated the back-gate carbon nanotube field effect transistors(CN-FETs), with a self-aligned gate insulator by anodic oxidation of aluminum. Combining the IC fabrication techniques and photolithography. our multi-walled carbon nanotubes work as...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/97440489591242976169 |