Fabrication of Carbon Nanotube Field Effect Transistors With Self-Aligned Gate Dielectric
碩士 === 大同大學 === 光電工程研究所 === 99 === In this paper, We fabricated the back-gate carbon nanotube field effect transistors(CN-FETs), with a self-aligned gate insulator by anodic oxidation of aluminum. Combining the IC fabrication techniques and photolithography. our multi-walled carbon nanotubes work as...
Main Authors: | Wei-Syun Wang, 王偉訓 |
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Other Authors: | Jeff Tsung-Hui Tsai |
Format: | Others |
Language: | zh-TW |
Published: |
2010
|
Online Access: | http://ndltd.ncl.edu.tw/handle/97440489591242976169 |
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