Optimization and fabrication of triple junction InGaP/GaAs/Ge tandem solar cell
碩士 === 元智大學 === 光電工程研究所 === 99 === This study is about the important field of energy development-solar cell. Solar cell is varied, among them the multi-junction tandem solar cell is the most efficient. This thesis investigates the research and fabrication of triple-junction tandem Ⅲ-Ⅴ compounds sola...
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ndltd-TW-099YZU051241282016-04-13T04:17:17Z http://ndltd.ncl.edu.tw/handle/46700377099448305636 Optimization and fabrication of triple junction InGaP/GaAs/Ge tandem solar cell InGaP/GaAs/Ge三接面串接式太陽能電池優化及製作 Yung-Chao Cheng 鄭勇釗 碩士 元智大學 光電工程研究所 99 This study is about the important field of energy development-solar cell. Solar cell is varied, among them the multi-junction tandem solar cell is the most efficient. This thesis investigates the research and fabrication of triple-junction tandem Ⅲ-Ⅴ compounds solar cells. The main topic is substitute of current single or multi-junction anti-reflection layer, and reduces the cost of fabrication. The surface of device adopts novel nano-imprint approach for Sub-wavelength Structure. And we simulate the best depth of etching with APSYS, software for optical properties. There are two patterns for structure of silicon nitride, Rod and Hole. We use this method for the anisotropic etching surface nanostructure of Ⅲ-Ⅴ compound solar cells, and transfer the pattern to the structure below. This technique is suitable for solar spectrum than single or multi-junction anti-reflection layer. It is expected for application of high efficiency solar cell in the future. Fang-I Lai 賴芳儀 2011 學位論文 ; thesis 60 zh-TW |
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碩士 === 元智大學 === 光電工程研究所 === 99 === This study is about the important field of energy development-solar cell. Solar cell is varied, among them the multi-junction tandem solar cell is the most efficient. This thesis investigates the research and fabrication of triple-junction tandem Ⅲ-Ⅴ compounds solar cells.
The main topic is substitute of current single or multi-junction anti-reflection layer, and reduces the cost of fabrication. The surface of device adopts novel nano-imprint approach for Sub-wavelength Structure. And we simulate the best depth of etching with APSYS, software for optical properties. There are two patterns for structure of silicon nitride, Rod and Hole. We use this method for the anisotropic etching surface nanostructure of Ⅲ-Ⅴ compound solar cells, and transfer the pattern to the structure below. This technique is suitable for solar spectrum than single or multi-junction anti-reflection layer. It is expected for application of high efficiency solar cell in the future.
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author2 |
Fang-I Lai |
author_facet |
Fang-I Lai Yung-Chao Cheng 鄭勇釗 |
author |
Yung-Chao Cheng 鄭勇釗 |
spellingShingle |
Yung-Chao Cheng 鄭勇釗 Optimization and fabrication of triple junction InGaP/GaAs/Ge tandem solar cell |
author_sort |
Yung-Chao Cheng |
title |
Optimization and fabrication of triple junction InGaP/GaAs/Ge tandem solar cell |
title_short |
Optimization and fabrication of triple junction InGaP/GaAs/Ge tandem solar cell |
title_full |
Optimization and fabrication of triple junction InGaP/GaAs/Ge tandem solar cell |
title_fullStr |
Optimization and fabrication of triple junction InGaP/GaAs/Ge tandem solar cell |
title_full_unstemmed |
Optimization and fabrication of triple junction InGaP/GaAs/Ge tandem solar cell |
title_sort |
optimization and fabrication of triple junction ingap/gaas/ge tandem solar cell |
publishDate |
2011 |
url |
http://ndltd.ncl.edu.tw/handle/46700377099448305636 |
work_keys_str_mv |
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