| Summary: | 碩士 === 元智大學 === 先進能源研究所 === 99 === In this study, the silicon nano-crystals were embedded into amorphous silicon thin films, leading to an increase in optical band gap due to the quantum confinement effect. A nc-Si:H film with the band gap of 1.95 eV was obtained by VHF (27.12 MHz) PECVD system and was used as a window layer for p-i-n a-Si:H thin film solar cells. The hetero-junction, p-layer nc-Si:H/i-layer a-Si:H, solar cell demonstrated an open-circuit voltage (Voc) of 0.88 V and a conversion efficiency of greater than 9%. This kind of cell structure has great potential for the development of the a-Si/uc-Si tandem cell and the conversion efficiency is expected to be 11%.
In addition, ECR-CVD (microwave frequency: 2.45 GHz) technique is powerful for the deposition of silicon films with high deposition rate. In this study, we attempted to use the system to deposit silicon films. The PECVD process experiences were helpful to give reasonable deposition parameters for ECR-CVD. Finally, we give some suggestions base on the measurement results of the film deposited by ECR-CVD.
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