The Photoelectric Characteristics Research Of Yttrium-doped Indium Oxide Thin-Film Transistors And Dielectric Layers

• Main Authors: Lin, Yan Feng, 林彥鋒
• Other Authors: Ting, Chu Chi
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/86348794058301798370

碩士 === 國立中正大學 === 光機電整合工程研究所 === 100 === This paper prepared by solution with Yttrium doped indium oxide as the transparent conductive thin film. Change the various mole ratio of yttrium as the active layer of thin-film transistors. It used mainly by the electronegativity difference of Y and O is greater than In and O, to reduce the oxygen vacancy generation and concentration, suitable for thin film transistor. GIXRD observation crystal of YIO thin films, and can calculate the grain size about 10nm size. To use SEM, AFM observations of its surface morphology. To use hall measurement to measure YIO hall mobility, resistivity and carrier concentration. XPS verified that the vacancy related oxygen decreased with increasing of Y concentration. It can confirm that YIO transparent thin films can be made into a good transistor active layer. In addition, dielectric layers is also the part for research. The optimum YIO TFT occurred at a YIO mole ratio of 0.12:1 and its channel mobility, threshold voltage, subthreshold swing voltage, and on/off ratio were 3.80 cm2/Vs, 18.00 V, 2.15 V/decade, and ~105, respectively.