The Fabrication and Photoelectric Characteristics Study of Amorphous phase Europium-doped Indium Zinc Oxide Thin Film Transistors (a-EuIZO TFTs)
碩士 === 國立中正大學 === 光機電整合工程研究所 === 100 === Sol-gel-processed thin-film transistors (TFTs) with amorphours Eu-In-Zn-O (EuIZO) as an active layer were fabricated with various mole ratio of Eu. This behavior indicates that Eu could play the role of carrier suppresspr in InZnO (IZO) systems and reduce...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ggcxbf |