The Investigation of InAlAs/InGaAs Photo Transistor and Front-End Receiver Design of Radio-Over-Fiber System

• Main Authors: Che Kai Lin, 林哲楷
• Other Authors: H. C. Chiu
• Format: Others
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/34745789589050857073

博士 === 長庚大學 === 電子工程學系 === 100 === In recent years, the requirement for wired and wireless communications, such like fixed (eg: wireless base station) and remote (eg: mobile phones, notebook computers) to access the network demand increase significantly. Because of ultra wide bandwidth and low loss properties, optical communication is considering the best solution for high speed broadband network. In many advanced microwave and millimeter-wave circuit, high-speed GaAs based hetero-junction field effect transistor is the most important device. In order to achieve the combination of low price and simple process of OEM (Optic-Electronic MIXER) requirements, HEMT has been widely used because of the photosensitive, and suitable for MMIC. This thesis focuses on OEM component using in ROF system. In0.4Al0.6As/In0.4Ga0.6As MHEMT was chosen because of its high electron mobility and compatible to 1310nm light wave. High electron mobility will produce some adverse effects, such as kink effect, the decline in breakdown voltage, leakage current. In this thesis, we try different methods to improve those problems. By using low temperature flicker noise measurement system, the trap location had been identified of proposed structure. Moreover, by using transparent gate in MHEMT, we successfully up-converted the optical signal on single device. Finally, 5.2GHz front-end receiver was designed by WIN semiconductor 0.5μm E/D mode process.