| Summary: | 碩士 === 遠東科技大學 === 機械工程研究所 在職專班 === 100 === This purpose of this study is to adopt sol-gel method to manufacture the thin film as Lanthanum-modified Lead-Zirconate-Titanate (PLZT7/30/70), using a commercial ITO glass as substrate, considering with or without a seeding layer of PLT, and also using sol-gel method to manufacture the upper SnO2 film. Further, a linear heterodyne interferometer is used to measure the electric-field-induced birefringence for the retardance of the PLZT film. Next, a UV-VIS spectrometer is used to measure the transmittance of PLZT film. Finally, the discussions and conclusions are made.
According to the experimental results by the heterodyne interferometer, the principal axis of a quarter-wave plate is rotated 0 to 180° in increments of 5°including 22.5°, the correlation coefficient for the principal axis angle is determined to be 0.99997 and the average relative error of the principal axis is 0.91%. When the principal axis is orientated at 22.5°, the average relative error of the retardance for ten times measurements is 1.80%. These results validate the measurement system methodology. The applied voltage on the PLZT films is from 0 to 0.5V in increments of 0.1V. The average retardance of the PLZT film is determined as 14.84°. Further, the average of retardance of the PLZT film with a PLT seeding layer is determined as 22.77°. From the wavelength range of 400nm to 700nm, the transmittance of PLZT film without a seeding layer is determined as 81.02%. Further, the transmittances of PLZT film with a seeding layer as PLT are determined as 73.20%, respectively. As above, the reference ITO glass substrate is annealed at 500℃. The thickness of PLT is 24nm, and that of PLZT film is 500nm by the SEM measurement. From the comparison, the retardance of PLZT film with a seeding layer as PLT is greater than that of the PLZT film without a seeding layer as PLT. Finally, we could know the seeding layer plays a key in the increase of the retardance and avoid the optical loss.
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