Study of Thin Film as Lanthanum-modified Lead-Zirconate-Titanate by Sol-Gel Method and Electro-Optic Properties

碩士 === 遠東科技大學 === 機械工程研究所 在職專班 === 100 === This purpose of this study is to adopt sol-gel method to manufacture the thin film as Lanthanum-modified Lead-Zirconate-Titanate (PLZT7/30/70), using a commercial ITO glass as substrate, considering with or without a seeding layer of PLT, and also using sol...

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Main Authors: Wang, Yingchuan, 王鶯娟
Other Authors: Chen, Wenruey
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/55301980264822621125
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spelling ndltd-TW-100FEC004890012015-10-16T04:03:28Z http://ndltd.ncl.edu.tw/handle/55301980264822621125 Study of Thin Film as Lanthanum-modified Lead-Zirconate-Titanate by Sol-Gel Method and Electro-Optic Properties 鋯鈦酸鉛鑭薄膜的溶膠-凝膠法製作及其光電性質之研究 Wang, Yingchuan 王鶯娟 碩士 遠東科技大學 機械工程研究所 在職專班 100 This purpose of this study is to adopt sol-gel method to manufacture the thin film as Lanthanum-modified Lead-Zirconate-Titanate (PLZT7/30/70), using a commercial ITO glass as substrate, considering with or without a seeding layer of PLT, and also using sol-gel method to manufacture the upper SnO2 film. Further, a linear heterodyne interferometer is used to measure the electric-field-induced birefringence for the retardance of the PLZT film. Next, a UV-VIS spectrometer is used to measure the transmittance of PLZT film. Finally, the discussions and conclusions are made. According to the experimental results by the heterodyne interferometer, the principal axis of a quarter-wave plate is rotated 0 to 180° in increments of 5°including 22.5°, the correlation coefficient for the principal axis angle is determined to be 0.99997 and the average relative error of the principal axis is 0.91%. When the principal axis is orientated at 22.5°, the average relative error of the retardance for ten times measurements is 1.80%. These results validate the measurement system methodology. The applied voltage on the PLZT films is from 0 to 0.5V in increments of 0.1V. The average retardance of the PLZT film is determined as 14.84°. Further, the average of retardance of the PLZT film with a PLT seeding layer is determined as 22.77°. From the wavelength range of 400nm to 700nm, the transmittance of PLZT film without a seeding layer is determined as 81.02%. Further, the transmittances of PLZT film with a seeding layer as PLT are determined as 73.20%, respectively. As above, the reference ITO glass substrate is annealed at 500℃. The thickness of PLT is 24nm, and that of PLZT film is 500nm by the SEM measurement. From the comparison, the retardance of PLZT film with a seeding layer as PLT is greater than that of the PLZT film without a seeding layer as PLT. Finally, we could know the seeding layer plays a key in the increase of the retardance and avoid the optical loss. Chen, Wenruey 陳玟瑞 2011 學位論文 ; thesis 80 zh-TW
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language zh-TW
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sources NDLTD
description 碩士 === 遠東科技大學 === 機械工程研究所 在職專班 === 100 === This purpose of this study is to adopt sol-gel method to manufacture the thin film as Lanthanum-modified Lead-Zirconate-Titanate (PLZT7/30/70), using a commercial ITO glass as substrate, considering with or without a seeding layer of PLT, and also using sol-gel method to manufacture the upper SnO2 film. Further, a linear heterodyne interferometer is used to measure the electric-field-induced birefringence for the retardance of the PLZT film. Next, a UV-VIS spectrometer is used to measure the transmittance of PLZT film. Finally, the discussions and conclusions are made. According to the experimental results by the heterodyne interferometer, the principal axis of a quarter-wave plate is rotated 0 to 180° in increments of 5°including 22.5°, the correlation coefficient for the principal axis angle is determined to be 0.99997 and the average relative error of the principal axis is 0.91%. When the principal axis is orientated at 22.5°, the average relative error of the retardance for ten times measurements is 1.80%. These results validate the measurement system methodology. The applied voltage on the PLZT films is from 0 to 0.5V in increments of 0.1V. The average retardance of the PLZT film is determined as 14.84°. Further, the average of retardance of the PLZT film with a PLT seeding layer is determined as 22.77°. From the wavelength range of 400nm to 700nm, the transmittance of PLZT film without a seeding layer is determined as 81.02%. Further, the transmittances of PLZT film with a seeding layer as PLT are determined as 73.20%, respectively. As above, the reference ITO glass substrate is annealed at 500℃. The thickness of PLT is 24nm, and that of PLZT film is 500nm by the SEM measurement. From the comparison, the retardance of PLZT film with a seeding layer as PLT is greater than that of the PLZT film without a seeding layer as PLT. Finally, we could know the seeding layer plays a key in the increase of the retardance and avoid the optical loss.
author2 Chen, Wenruey
author_facet Chen, Wenruey
Wang, Yingchuan
王鶯娟
author Wang, Yingchuan
王鶯娟
spellingShingle Wang, Yingchuan
王鶯娟
Study of Thin Film as Lanthanum-modified Lead-Zirconate-Titanate by Sol-Gel Method and Electro-Optic Properties
author_sort Wang, Yingchuan
title Study of Thin Film as Lanthanum-modified Lead-Zirconate-Titanate by Sol-Gel Method and Electro-Optic Properties
title_short Study of Thin Film as Lanthanum-modified Lead-Zirconate-Titanate by Sol-Gel Method and Electro-Optic Properties
title_full Study of Thin Film as Lanthanum-modified Lead-Zirconate-Titanate by Sol-Gel Method and Electro-Optic Properties
title_fullStr Study of Thin Film as Lanthanum-modified Lead-Zirconate-Titanate by Sol-Gel Method and Electro-Optic Properties
title_full_unstemmed Study of Thin Film as Lanthanum-modified Lead-Zirconate-Titanate by Sol-Gel Method and Electro-Optic Properties
title_sort study of thin film as lanthanum-modified lead-zirconate-titanate by sol-gel method and electro-optic properties
publishDate 2011
url http://ndltd.ncl.edu.tw/handle/55301980264822621125
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