Effects of 1,10-Phenanthroline on Electroless Copper Deposition

• Main Author: 劉于瑄
• Other Authors: 梁世明
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/85206089767962039063

碩士 === 明新科技大學 === 化學工程與材料科技研究所 === 100 === Recently copper has been used to replace Al metallization in ultra large scale integrated (ULSI) technology because of low resistivity and stress-induced voiding. Copper can be deposited by physical vapor deposition, thermal-induced reflow, chemical vapor deposition, electroplation and electroless deposition. Electroless copper deposition can be processed with high speed in mass production. Therefore, Electroless copper deposition would be a potential technology for the manufacture of ULSI. This study investigates the deposition of copper FR-4 substrate to the electroless plating, Chemical bath together added around the polyethylene glycol and 1,10 - Phenanthroline two kinds of additives, The coating surface morphology observed by scanning electron microscopy (SEM), And X-ray powder diffraction (XRPD) measurements the crystal structure, Then the energy dispersive spectrometer (EIS) to investigate the influence of additives 1,10 - Phenanthroline around the morpholine under different concentrations of the electroless plating reaction, Finally, the four-point probe to know the impact of the change of the concentration of additives on the coating resistance.