Effects of 1,10-Phenanthroline on Electroless Copper Deposition
碩士 === 明新科技大學 === 化學工程與材料科技研究所 === 100 === Recently copper has been used to replace Al metallization in ultra large scale integrated (ULSI) technology because of low resistivity and stress-induced voiding. Copper can be deposited by physical vapor deposition, thermal-induced reflow, che...
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ndltd-TW-100MHIT50630132015-10-13T21:27:35Z http://ndltd.ncl.edu.tw/handle/85206089767962039063 Effects of 1,10-Phenanthroline on Electroless Copper Deposition 探討化學鍍液中添加1,10-菲繞啉對鍍層之影響 劉于瑄 碩士 明新科技大學 化學工程與材料科技研究所 100 Recently copper has been used to replace Al metallization in ultra large scale integrated (ULSI) technology because of low resistivity and stress-induced voiding. Copper can be deposited by physical vapor deposition, thermal-induced reflow, chemical vapor deposition, electroplation and electroless deposition. Electroless copper deposition can be processed with high speed in mass production. Therefore, Electroless copper deposition would be a potential technology for the manufacture of ULSI. This study investigates the deposition of copper FR-4 substrate to the electroless plating, Chemical bath together added around the polyethylene glycol and 1,10 - Phenanthroline two kinds of additives, The coating surface morphology observed by scanning electron microscopy (SEM), And X-ray powder diffraction (XRPD) measurements the crystal structure, Then the energy dispersive spectrometer (EIS) to investigate the influence of additives 1,10 - Phenanthroline around the morpholine under different concentrations of the electroless plating reaction, Finally, the four-point probe to know the impact of the change of the concentration of additives on the coating resistance. 梁世明 2011 學位論文 ; thesis 81 zh-TW |
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碩士 === 明新科技大學 === 化學工程與材料科技研究所 === 100 === Recently copper has been used to replace Al metallization in ultra large scale integrated (ULSI) technology because of low resistivity and stress-induced voiding. Copper can be deposited by physical vapor deposition, thermal-induced reflow, chemical vapor deposition, electroplation and electroless deposition. Electroless copper deposition can be processed with high speed in mass production. Therefore, Electroless copper deposition would be a potential technology for the manufacture of ULSI.
This study investigates the deposition of copper FR-4 substrate to the electroless plating, Chemical bath together added around the polyethylene glycol and 1,10 - Phenanthroline two kinds of additives, The coating surface morphology observed by scanning electron microscopy (SEM), And X-ray powder diffraction (XRPD) measurements the crystal structure, Then the energy dispersive spectrometer (EIS) to investigate the influence of additives 1,10 - Phenanthroline around the morpholine under different concentrations of the electroless plating reaction, Finally, the four-point probe to know the impact of the change of the concentration of additives on the coating resistance.
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梁世明 |
author_facet |
梁世明 劉于瑄 |
author |
劉于瑄 |
spellingShingle |
劉于瑄 Effects of 1,10-Phenanthroline on Electroless Copper Deposition |
author_sort |
劉于瑄 |
title |
Effects of 1,10-Phenanthroline on Electroless Copper Deposition |
title_short |
Effects of 1,10-Phenanthroline on Electroless Copper Deposition |
title_full |
Effects of 1,10-Phenanthroline on Electroless Copper Deposition |
title_fullStr |
Effects of 1,10-Phenanthroline on Electroless Copper Deposition |
title_full_unstemmed |
Effects of 1,10-Phenanthroline on Electroless Copper Deposition |
title_sort |
effects of 1,10-phenanthroline on electroless copper deposition |
publishDate |
2011 |
url |
http://ndltd.ncl.edu.tw/handle/85206089767962039063 |
work_keys_str_mv |
AT liúyúxuān effectsof110phenanthrolineonelectrolesscopperdeposition AT liúyúxuān tàntǎohuàxuédùyèzhōngtiānjiā110fēiràolínduìdùcéngzhīyǐngxiǎng |
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1718063742850170880 |