Investigate and Research for Physical Characteristics of Quaternary Cu2ZnSnSe4 Thin Films by Pulsed Laser Ablation Technique

• Main Authors: Tung-Tung Chen, 陳冬東
• Other Authors: Horng-Show Koo
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/89918055394352211833

碩士 === 明新科技大學 === 電子工程研究所 === 100 === Cu2ZnSnSe4 (CZTSe) is a promising direct-bandgap semiconductor material with optical band gap energy of 1.4-1.5 eV and the absorption coefficient over 104 cm-1. The BZO transparent conducting films have high conductivity and transmittance, and are suitable to be a window layer for improving the photovoltaic characteristics of solar cell devices. In this paper, copper-zinc-tin-selenium (CZTSe) and boron-doped zinc oxide (BZO) compounds targets are prepared by solid state sintering, while CZTSe and BZO compounds thin films are preparaed by the pulsed laser ablation (PLA) technique. CZTSe thin films are deposited on substrates of glass, molybdenum-coated glass, soda lime glass and molybdenum-coated soda lime glass, with various substrate temperatures. While BZO thin films are deposited on glass substrate and the substrate temperature were set to be 100 ℃, 200 ℃, 300 ℃, 400 ℃ and 500 ℃, respectively. The X-ray diffraction measurements of CZTSe thin films show characteristic peaks of (112), (220/204) and (312/116). From Raman spectroscopy measurement exhibits the Raman shift peaks of 170cm-1, 194 cm-1 and 230 cm-1 for the CZTSe phase. The EDS analysis shows the atomic ratio of tin element is lower for sample at 400℃, while that of zinc and tin elements is much lower for sample processing at 500℃. The optical characteristics mesurements of the CZTSe thin films exhibit absorption coefficient of more than 104cm-1, the bandgap values between 1.26 eV to 1.4 eV. The X-ray diffraction of BZO thin films shows diffraction peaks of (002) and (004). From Raman spectroscopy measurement shows the Raman shift peaks of 576cm-1 for the zinc-rich phase. The electrical measurements show low resistivity of 5.3 × 10-3Ω-cm for sample at processing temperature of 200 ℃. The optical measurements of BZO thin film show the light transmittance reaching more 85% and the bandgap value of 3.3eV for sample at 300℃.