| Summary: | 碩士 === 明志科技大學 === 材料工程研究所 === 100 === The In-doped ZnO (IZO) films with wide ranging In contents of 0 to 29.4 at.% are co-sputtered on glass substrates at ambient temperature. An ultra high electric resistivity (ρ) cannot be detected by four point probe measurement for pure ZnO films with no adding In atom. The ρ value can be reduced to 8.2 Ω-cm as 0.7 at.% In content is added into ZnO film. It decreases significantly to 0.03 Ω-cm when the In content is increased to 2.2 at.%. Upon further increasing the In content to 10.5 at.%, the ρ value of IZO film is further decreased to 7.0 x 10-3 Ω-cm. All the IZO films with In contents of above 0.7 at.% show a n-type transport behavior.
The electrical resistivity of NiO films are reduced by different O2 ion sources and O2 partial pressures during depositing the films. The ρ value of NiO film deposited in pure Ar atmosphere decreases to 0.498 Ω-cm as O2 ion source of 80 watt is introduced. Upon further increasing O2 ion source to 100, 120 and 150 watt respectively, the electric resistivity of the films are further decreased to 0.188, 0.163 and 0.13 Ω-cm. On the other hand, when the NiO films are deposited in pure O2 atomsphere and using O2 ion source of 150 watt, the resistivity of the NiO film are significantly decreased to 0.025 Ω-cm. The increased in hole number of NiO films leads to a decrease in the electric resistivity of the films.
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