Effect of process parameters on microstructure, electrical and optical properties of transparent conducting films
碩士 === 明志科技大學 === 材料工程研究所 === 100 === The In-doped ZnO (IZO) films with wide ranging In contents of 0 to 29.4 at.% are co-sputtered on glass substrates at ambient temperature. An ultra high electric resistivity (ρ) cannot be detected by four point probe measurement for pure ZnO films with no adding...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2012
|
Online Access: | http://ndltd.ncl.edu.tw/handle/s6w75y |
id |
ndltd-TW-100MIT00159002 |
---|---|
record_format |
oai_dc |
spelling |
ndltd-TW-100MIT001590022019-06-27T05:10:44Z http://ndltd.ncl.edu.tw/handle/s6w75y Effect of process parameters on microstructure, electrical and optical properties of transparent conducting films 製程參數對透明導電薄膜之顯微結構、電及光性質影響研究 Peng, Wenchih 彭文志 碩士 明志科技大學 材料工程研究所 100 The In-doped ZnO (IZO) films with wide ranging In contents of 0 to 29.4 at.% are co-sputtered on glass substrates at ambient temperature. An ultra high electric resistivity (ρ) cannot be detected by four point probe measurement for pure ZnO films with no adding In atom. The ρ value can be reduced to 8.2 Ω-cm as 0.7 at.% In content is added into ZnO film. It decreases significantly to 0.03 Ω-cm when the In content is increased to 2.2 at.%. Upon further increasing the In content to 10.5 at.%, the ρ value of IZO film is further decreased to 7.0 x 10-3 Ω-cm. All the IZO films with In contents of above 0.7 at.% show a n-type transport behavior. The electrical resistivity of NiO films are reduced by different O2 ion sources and O2 partial pressures during depositing the films. The ρ value of NiO film deposited in pure Ar atmosphere decreases to 0.498 Ω-cm as O2 ion source of 80 watt is introduced. Upon further increasing O2 ion source to 100, 120 and 150 watt respectively, the electric resistivity of the films are further decreased to 0.188, 0.163 and 0.13 Ω-cm. On the other hand, when the NiO films are deposited in pure O2 atomsphere and using O2 ion source of 150 watt, the resistivity of the NiO film are significantly decreased to 0.025 Ω-cm. The increased in hole number of NiO films leads to a decrease in the electric resistivity of the films. Chen, Shengchi 陳勝吉 2012 學位論文 ; thesis 90 zh-TW |
collection |
NDLTD |
language |
zh-TW |
format |
Others
|
sources |
NDLTD |
description |
碩士 === 明志科技大學 === 材料工程研究所 === 100 === The In-doped ZnO (IZO) films with wide ranging In contents of 0 to 29.4 at.% are co-sputtered on glass substrates at ambient temperature. An ultra high electric resistivity (ρ) cannot be detected by four point probe measurement for pure ZnO films with no adding In atom. The ρ value can be reduced to 8.2 Ω-cm as 0.7 at.% In content is added into ZnO film. It decreases significantly to 0.03 Ω-cm when the In content is increased to 2.2 at.%. Upon further increasing the In content to 10.5 at.%, the ρ value of IZO film is further decreased to 7.0 x 10-3 Ω-cm. All the IZO films with In contents of above 0.7 at.% show a n-type transport behavior.
The electrical resistivity of NiO films are reduced by different O2 ion sources and O2 partial pressures during depositing the films. The ρ value of NiO film deposited in pure Ar atmosphere decreases to 0.498 Ω-cm as O2 ion source of 80 watt is introduced. Upon further increasing O2 ion source to 100, 120 and 150 watt respectively, the electric resistivity of the films are further decreased to 0.188, 0.163 and 0.13 Ω-cm. On the other hand, when the NiO films are deposited in pure O2 atomsphere and using O2 ion source of 150 watt, the resistivity of the NiO film are significantly decreased to 0.025 Ω-cm. The increased in hole number of NiO films leads to a decrease in the electric resistivity of the films.
|
author2 |
Chen, Shengchi |
author_facet |
Chen, Shengchi Peng, Wenchih 彭文志 |
author |
Peng, Wenchih 彭文志 |
spellingShingle |
Peng, Wenchih 彭文志 Effect of process parameters on microstructure, electrical and optical properties of transparent conducting films |
author_sort |
Peng, Wenchih |
title |
Effect of process parameters on microstructure, electrical and optical properties of transparent conducting films |
title_short |
Effect of process parameters on microstructure, electrical and optical properties of transparent conducting films |
title_full |
Effect of process parameters on microstructure, electrical and optical properties of transparent conducting films |
title_fullStr |
Effect of process parameters on microstructure, electrical and optical properties of transparent conducting films |
title_full_unstemmed |
Effect of process parameters on microstructure, electrical and optical properties of transparent conducting films |
title_sort |
effect of process parameters on microstructure, electrical and optical properties of transparent conducting films |
publishDate |
2012 |
url |
http://ndltd.ncl.edu.tw/handle/s6w75y |
work_keys_str_mv |
AT pengwenchih effectofprocessparametersonmicrostructureelectricalandopticalpropertiesoftransparentconductingfilms AT péngwénzhì effectofprocessparametersonmicrostructureelectricalandopticalpropertiesoftransparentconductingfilms AT pengwenchih zhìchéngcānshùduìtòumíngdǎodiànbáomózhīxiǎnwēijiégòudiànjíguāngxìngzhìyǐngxiǎngyánjiū AT péngwénzhì zhìchéngcānshùduìtòumíngdǎodiànbáomózhīxiǎnwēijiégòudiànjíguāngxìngzhìyǐngxiǎngyánjiū |
_version_ |
1719210610903744512 |