The influence of i-ayer on the performance of HIT solar cells

碩士 === 國立中興大學 === 光電工程研究所 === 100 === In this thesis, the heterojunction with intrinsic hydrogenated amorphous silicon (a-Si:H) thin layer (heterojunction with intrinsic thin layer: HIT) solar cells are investigated. The solar cells with structure of p(a-Si:H)/i(a-Si:H)/n(c-Si) are fabricated. The s...

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Main Authors: Yu-Wen Yen, 嚴玉雯
Other Authors: 江雨龍
Format: Others
Language:zh-TW
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/31264592513338851231
id ndltd-TW-100NCHU5124017
record_format oai_dc
spelling ndltd-TW-100NCHU51240172016-09-25T04:04:20Z http://ndltd.ncl.edu.tw/handle/31264592513338851231 The influence of i-ayer on the performance of HIT solar cells I層特性對異質接面太陽能電池效率之影響 Yu-Wen Yen 嚴玉雯 碩士 國立中興大學 光電工程研究所 100 In this thesis, the heterojunction with intrinsic hydrogenated amorphous silicon (a-Si:H) thin layer (heterojunction with intrinsic thin layer: HIT) solar cells are investigated. The solar cells with structure of p(a-Si:H)/i(a-Si:H)/n(c-Si) are fabricated. The substrate is a typical 4-inch n-type wafer with (100) crystal orientation, 1~10 ohm-cm and about 360 μm thickness. First, HF dip and dry etching are used to passivate the surface. Second, the a-Si:H p- and i-layers are deposited by a 40.68 MHz plasma enhanced chemical vapor deposition. The a-Si:H i-layers are changed by deposition temperature and pressure to selectively control the different silicon to hydrogen (SiH) bonding configurations. The effect of various Si:H bonds on the performance of HIT solar cells are explored. Fourier-transform infrared spectra show that increase the monohydride (SiH) bonds and increasing the polyhydride ((SiH2) or (SiH2)n) bonds will reduce the hydrogen content (CH) and increase the real and imagine of dielectric constants (Ɛ1 and Ɛ2). I-V measurements indicate that the a-Si:H i-layers of HIT solar cells with low microstructure (RS = (SiH2/(SiH+SiH2)) can increase the fill factor, short-circuit current and energy transfer efficiency. Low-RS a-Si:H films are denser and have low defect densities. The passivation of p/i interface by low-RS a-Si:H i-layer can reduce the recombination at the interface and in the bulk of i-layer. Adding a-Si:H i-layer at the p/i interface can effectively passivate the bonding defects due to formation of heterojunction. Reducing the interface recombination significantly increase the open-circuit voltage, short-circuit current and fill factor. Inserting a thin a-Si:H i-layer with more SiH bonds can improve the performance of HIT solar cells. 江雨龍 2012 學位論文 ; thesis 49 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立中興大學 === 光電工程研究所 === 100 === In this thesis, the heterojunction with intrinsic hydrogenated amorphous silicon (a-Si:H) thin layer (heterojunction with intrinsic thin layer: HIT) solar cells are investigated. The solar cells with structure of p(a-Si:H)/i(a-Si:H)/n(c-Si) are fabricated. The substrate is a typical 4-inch n-type wafer with (100) crystal orientation, 1~10 ohm-cm and about 360 μm thickness. First, HF dip and dry etching are used to passivate the surface. Second, the a-Si:H p- and i-layers are deposited by a 40.68 MHz plasma enhanced chemical vapor deposition. The a-Si:H i-layers are changed by deposition temperature and pressure to selectively control the different silicon to hydrogen (SiH) bonding configurations. The effect of various Si:H bonds on the performance of HIT solar cells are explored. Fourier-transform infrared spectra show that increase the monohydride (SiH) bonds and increasing the polyhydride ((SiH2) or (SiH2)n) bonds will reduce the hydrogen content (CH) and increase the real and imagine of dielectric constants (Ɛ1 and Ɛ2). I-V measurements indicate that the a-Si:H i-layers of HIT solar cells with low microstructure (RS = (SiH2/(SiH+SiH2)) can increase the fill factor, short-circuit current and energy transfer efficiency. Low-RS a-Si:H films are denser and have low defect densities. The passivation of p/i interface by low-RS a-Si:H i-layer can reduce the recombination at the interface and in the bulk of i-layer. Adding a-Si:H i-layer at the p/i interface can effectively passivate the bonding defects due to formation of heterojunction. Reducing the interface recombination significantly increase the open-circuit voltage, short-circuit current and fill factor. Inserting a thin a-Si:H i-layer with more SiH bonds can improve the performance of HIT solar cells.
author2 江雨龍
author_facet 江雨龍
Yu-Wen Yen
嚴玉雯
author Yu-Wen Yen
嚴玉雯
spellingShingle Yu-Wen Yen
嚴玉雯
The influence of i-ayer on the performance of HIT solar cells
author_sort Yu-Wen Yen
title The influence of i-ayer on the performance of HIT solar cells
title_short The influence of i-ayer on the performance of HIT solar cells
title_full The influence of i-ayer on the performance of HIT solar cells
title_fullStr The influence of i-ayer on the performance of HIT solar cells
title_full_unstemmed The influence of i-ayer on the performance of HIT solar cells
title_sort influence of i-ayer on the performance of hit solar cells
publishDate 2012
url http://ndltd.ncl.edu.tw/handle/31264592513338851231
work_keys_str_mv AT yuwenyen theinfluenceofiayerontheperformanceofhitsolarcells
AT yányùwén theinfluenceofiayerontheperformanceofhitsolarcells
AT yuwenyen icéngtèxìngduìyìzhìjiēmiàntàiyángnéngdiànchíxiàolǜzhīyǐngxiǎng
AT yányùwén icéngtèxìngduìyìzhìjiēmiàntàiyángnéngdiànchíxiàolǜzhīyǐngxiǎng
AT yuwenyen influenceofiayerontheperformanceofhitsolarcells
AT yányùwén influenceofiayerontheperformanceofhitsolarcells
_version_ 1718384689679433728