Sulfide Quantum Dot-Sensitized Cells with Tandem Arrangement

• Main Authors: Cheng-YuLin, 林承郁
• Other Authors: Hsi-Sheng Teng
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/93489017144186755801

碩士 === 國立成功大學 === 化學工程學系碩博士班 === 100 === In this study, a photoactive PbS thin layer was deposited on the fluorine-doped tin oxide (FTO) via successive ionic solution coating and reaction process, and it was used as counter electrode to raise the exhibition in power conversion efficiency (PCE) of the quantum dot-sensitized solar cell (QDSSC). Under illumination, the Fermi level of the p-type photoactive PbS counter electrode shifts toward the direction of valance band, and the photovoltage increases due to it equals to a sum of the chemical potential differences between the anode and cathode in a tandem QDSSC. At the same time, with small band gap PbS can also utilize the light which was not absorbed by working electrode to increase the current density. The tandem QDSSC exhibits a short-circuit photocurrent (Jsc) of 18.26 mA cm-2, an open-circuit photovoltage (Voc) of 573 mV, a fill factor of 44.47, and a conversion efficiency of 4.83 % under one-sun illumination.