| Summary: | 碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 100 === In this dissertation, I used co-electro-deposition technique instead of traditional physical vapor deposition to deposit Cu-In-Ga precursors on a Cr and Mo coated flexible stainless steel substrate, followed by a high temperature selenization process to form CuInGaSe2 (CIGS) absorber layer. Electroplating has many advantages such as low cost, simple process, and available for large-scale production. Solar cell using flexible substrate can apply portable devices and have the potential to boost the demand of photovoltaic module. It has considerable benefits to the photovoltaic industry.
In this study is found that：Concentration of the plating solutions, co-plating voltage, plating time, selenization temperature, and selenization duration, can significantly influence on the quality of the CIGS absorber layer. The study used SEM, EDX, XRD, and XPS to analyze film’s morphology, element composition, crystalline phase and it’s orientation, depth profile (distribution) of the element.
CIGS thin film solar cells have been successfully fabricated after CdS/i-ZnO/ AZO and the metal grids were deposited. From the current-voltage test result, it indicates that the device has remarkable diode characteristics. Currently, the best solar cell has following photovoltaic parameters: Voc=210 mV, Jsc = 4.98 mA/cm2, F.F.=24 % and η=0.246 % .
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