| Summary: | 碩士 === 國立成功大學 === 光電科學與工程學系 === 100 === In this study we focused on the optical and electrical characteristics of Mn-doped GaN for application in the intermediate band solar cells (IBSCs). In the beginning we investigated Mn-doped GaN by transmittance spectrums, hall measurement and PL. According to the transmittance spectrums, the Mn-doped GaN exhibited that the Mn-related intermediate band was formed in the forbidden band of GaN. Therefore, apart from absorbing the photons with energy more than the band gap energy of GaN, the photons with energy that was higher than the difference between the intermediate band and the conduction (valence) band could also be absorbed. So we used the Mn-doped GaN as the active layer of solar cells, expecting that the intermediate band of Mn-doped GaN could contribute more photocurrent.
In our work, we fabricated two kinds of Mn-doped GaN intermediate band solar cells. The difference was the window layer. One was p-AlGaN and the other was p-GaN. Then we discussed the influence of the different window layers applied to intermediate band solar cell and expected the intermediate band could enhance the photocurrent. The more details would be discussed in this dissertation .
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