The study of charge transport mechanism in n-type pentacene-based organic field-effect transistors
碩士 === 國立成功大學 === 光電科學與工程學系 === 100 === This study investigates the influence of the electronic trap states in pentacene-based organic field effect transistors (OFET) with pentacene as active layer, aluminum as source-drain electrodes, and polystyrene (PS) as dielectrics. It found that the different...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/82627913771625748740 |
| Summary: | 碩士 === 國立成功大學 === 光電科學與工程學系 === 100 === This study investigates the influence of the electronic trap states in pentacene-based organic field effect transistors (OFET) with pentacene as active layer, aluminum as source-drain electrodes, and polystyrene (PS) as dielectrics. It found that the different evaporated rates of pentacene are correlated with the amount of grain boundary which is consider as the intrinsic defects and affects the device characteristics. It also found the samples with exposing to oxygen resulting in the decay of electron mobility. This phenomenon ascribes to oxygen-related impurity defects. Both defects can be analyzed the trap density of sates by Kalb et al. In order to verify the existences of trap states, the photon excitation is a useful tool. But we observe a special phenomenon that the transformation from unipolar to ambipolar transport and the decay of electron flow under illumination. The ambipolar behavior and electron decay relate mainly to the trap states in electronic transport. This study provides insights of defects in channel, develops device structure and fabrication approaches, and evaluates the feasibility of n-type pentacene-based OFETs.
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