Study of Indium Tin Oxide Optoelectronic Characteristics and Ohmic Contact with p-GaN by Magnetron Sputtering

碩士 === 國立成功大學 === 光電科學與工程學系 === 100 ===  In this experiment, transparent and conductive indium tin oxide (ITO) film were deposited on p-GaN and sapphire by the rf magnetron sputter system. Investigation of ohmic contact between ITO on p-type GaN determined by the transmission line model (TLM), and d...

Full description

Bibliographic Details
Main Authors: Tian-JingFeng, 馮天璟
Other Authors: Wei-Chih Lai
Format: Others
Language:zh-TW
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/14483447108912394763