Growth and Characterization of Graphene by Carbon Diffusion through Nickel Thin Film

• Main Authors: Chen-HuiChen, 陳蓁慧
• Other Authors: Chuan-Pu Liu
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/34161291047318748080

碩士 === 國立成功大學 === 奈米科技暨微系統工程研究所 === 100 === In this research, large-area graphene is grown by solid state reactions, distinctly different from conventional chemical vapor deposition. In the first step, carbon is sputtered uniformly on a nickel thin film, with precise thickness control at the sputtering rate of 0.1 angstrom/sec. Subsequently, carbon is dissolved into nickel under high temperature annealing and graphene is formed on surface through precipitation during cooling, where the number of atomic layers of graphene can be controlled by annealing temperature between 800℃ and 950℃. The number of graphene layers is confirmed by Raman spectroscopy; electrical properties by Probe Station; and microstructure by Scanning electron microscopy and transmission electron microscopy. The sheet resistance is measured by transferring graphene onto a SiO2 substrate patterned with electrodes. The relationship between experimental parameters and the number of graphene layers is discussed, including the thickness and microstructure of the carbon and nickel films, annealing temperature, etc. The domain size is calculated by Raman characteristic peaks, as well as directly measured by transmission electron microscopy. Finally, we have succeeded in producing high quality graphene by using a facile process, and learned that the Ni (300 nm) / C (3 nm) / SiO2 annealed at 950℃ for 15 minutes as the best parameters for the resulting 2D / G and D / G intensity ratios of 1.04 and 0.052, respectively. Besides, we also demonstrate graphene can be formed at the lowest temperature of 800℃ for short-term holding of one minute.