Fabrication and Application of Copper Micro-Nano Wires by Electrochemical Deposition

• Main Authors: Chen-YuYang, 楊鎮宇
• Other Authors: Chen-Kui Chung
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/45124110604607507132

碩士 === 國立成功大學 === 奈米科技暨微系統工程研究所 === 100 === In this study, we utilized both direct current (DC) and pulse electroforming modes to deposit copper micro-nano wires by anodic aluminum oxide (AAO) template electrochemical deposition method. The variation of morphology and crystallographic structure of copper micro-nano wires between modulated parameters such as voltage, temperature, pore size and duty cycle were investigated. And we also measured the field emission characteristic of copper nanowires. In the experiment process, the structure of copper micro-nano wires was investigated by scanning electron microscopy (SEM). The crystallographic structure of copper nanowires was characterized by grazing incidence X-ray diffraction (GIXRD). The field emission characteristic of copper nanowires was measured by field emission measurement system. At direct current electroforming mode, the length of copper microwires at 1, 2, 3 V was 36.23, 49.54, 55.12 μm . The length of copper nanowires at 1, 2, 3 V was 28.45±4.28, 1.01±0.21, 0.66±0.16 μm. The experimental result showed that the growth of copper microwires increased with increasing voltage. The good result of copper nanowires was at 1 V. At the pulse electroforming mode, the length of copper microwires at 1, 2, 3 V was 34.38, 40.48, 49.84 μm. The length of copper nanowires at 1, 2, 3 V was 25.16±2.81, 31.64±4.29, 22.75±4.33 μm. The experimental result showed that the growth of copper microwires increased with increasing voltage. The good result of copper nanowires was at 2 V. At the measurement of field emission characteristic, the sample at template pore size 20 nm, voltage 1 V, duty cycle 50%, temperature 25 ℃ has low turn-on voltage. The copper nanostructure was expected to apply in probes, emitters and interconnects.