| Summary: | 碩士 === 國立暨南國際大學 === 電機工程學系 === 100 === In this thesis, a 1-V 2.45GHz passive RFID transponder with integrated infrared sensor is presented. The chip contains temperature sensor, readout circuit, SAR ADC and passive RFID. The temperature sensor of the urn-shaped structure uses MEMS process to etch a cavity in the metal later for resulting diffraction and multiple-reflection in the etched cavity to increase the absorbed infrared energy. The SAR ADC adopts the dual-frequency method to generate a 2.4KHz clock for sample and hold, and a 2.4MHz for digital code conversion. The RFID transponder chip can receive 0.5W EIRP 2.45GHz incident RF signal from 1-meter to drive circuit and supply the energy.
The chip is implemented using TSMC 0.18um 1P6M CMOS-MEMS process provided by CIC. The thermal sensor and readout circuit work at 1V power supply, and the power consumption is less than 70uW. When tempeteature changes from -25℃ ~ 95℃, the voltage output is 236mV ~ 901mV and the digital output is 00111010 ~ 11101000. The simulation results of the ADC show that the SNDR and ENOB are 49.467 dB and 7.925-bit at 240KS/s sampling rate, respectively and 2.8125KHz input frequency with power consumption of 2.8043uW from a 1V supply voltage. The FOM is 48.08 fJ/conversion. The whole chip area is 950.545 ×965.04um2, and power consumption less than 85uW.
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