| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 100 === We report the fabrication of InGaAs quantum wells and InAs quantum dots edge emitting laser diodes with deep-etched Distributed Bragg Reflectors (DBR), which were patterned by e-beam lithography and etched by inductivity coupled plasma. By using DBR, a low loss micro-cavity will be formed for the laser diode so that the threshold current (Ith) of lasers is lower than cleaved lasers. At first, lasers of InGaAs quantum well structure with patterned DBR were investigated. From the measurements, we found that Ith decreases comparing with conventional lasers. Then, we discuss the device characteristics of laser diodes with three different mirror combinations, various cavity lengths, and different temperatures. Lasing have been achieved from 30-µm-long and 10-µm-wide devices exhibiting Ith of 4.62mA. The minimum of Ith, 4.27mA, was obtained with a 50-µm cavity length. The DBR reflectivity extracted by conventional method is not accurate as we expected. Therefore, the loss factor should be considered to obtain more precise the DBR reflectivity. Furthermore, we have successfully fabricated 1.3µm InAs quantum dots DBR laser for the first time. For a 250-µm cavity length, Ith of this shortest-cavity laser is 51.07mA. The minimum of Ith at 4.91mA was observed from a 500-µm-cavity InAs quantum dot laser.
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