Advanced Modeling of Gate Tunneling Current in CMOSFETs and FinFETs and Its Potential Application
博士 === 國立交通大學 === 電子研究所 === 100 === Analytic gate direct tunneling and Fowler-Nordheim tunneling current model for conventional polysilicon gate oxide MOSFETs and present-day metal-gate/high-k/IL gate stack CMOSFETs and n-FinFETs is established. In addition, trap related tunneling is incorporated as...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/16154671587461601128 |