Advanced Modeling of Gate Tunneling Current in CMOSFETs and FinFETs and Its Potential Application

博士 === 國立交通大學 === 電子研究所 === 100 === Analytic gate direct tunneling and Fowler-Nordheim tunneling current model for conventional polysilicon gate oxide MOSFETs and present-day metal-gate/high-k/IL gate stack CMOSFETs and n-FinFETs is established. In addition, trap related tunneling is incorporated as...

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Bibliographic Details
Main Authors: Hsu, Chih-Yu, 許智育
Other Authors: Chen, Ming-Jer
Format: Others
Language:en_US
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/16154671587461601128

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