| Summary: | 碩士 === 國立交通大學 === 電子物理系所 === 100 === In this experiment use WO3 and IrO2 for semiconductor materials.The use of these two materials to make that no electrolyte solution on the concentration of methane gas sensor for semiconductor components. The main physical mechanism from the hydrogen iron injection of electrons (double inject). Components due to the iridium dioxide thin films of hydrogen ion diffusion in the applied bias to three tungsten oxide, Which component has the function of the diode switch.
This original production process, this two semiconductor materials made of the sputtering method, and add miscellaneous metal iridium as a sensitizer to improve the device sensitivity and stability. According to the experimental results, the diode body sensing element under the forward voltage and high temperature environment, injection of methane gas under electrical changes. Use this feature, this component can regulate the sensitivity of methane gas, and as a sensing component of the methane gas.
This component advantages: (1) do not need to add electrolyte (liquid); (2) diode switch (3) gas sensor reproducibility; (4) sensitivity linearization (5) sensitivity in a specific operating temperature and voltage stability.
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