The Impact of Morphology and Crystallization Condition on Thin Film Transistors and Nonvolatile Memories

• Main Authors: Liu, Shao-Xuan, 劉劭軒
• Other Authors: Chao, Tien-Sheng
• Format: Others
• Language: en_US
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/24680527024843734243

碩士 === 國立交通大學 === 電子物理系所 === 100 === Recently, the applications of the nonvolatile memory device have gone far beyond anyone else such as computer, personal digital assistant, and electronic portable equipment. On the other hand, to realize system-on-plane (SOP) display, the important task is to improve LTPS-NVSM. However, the impacts of the poly Si channel condition on NVSM are missing. As the result, this dissertation studies the impacts of morphology and crystallization condition on thin film transistors and nonvolatile memory. First, the roughness generated by thermal oxidation conditions was systematically reviewed for the nonvolatile memory P/E efficiency. Also, the mobility, threshold voltage, and leakage current exhibit a strong dependence on roughness. Moreover, we find the channel thickness and crystallization temperature altering the grain size and trap density, resulting in the different electrical characteristics of nonvolatile memory and transistors. Thicker channel devices enhance performance but case higher leakage current. On the other hand, lower SPC temperature (580 °C) devices show the better electrical characteristics, because their larger grain. On the other hand, we also study reliability issues such as retention, gate disturbance and drain disturbance with different morphology and crystallization condition.