Effect of NH3 flow rate on morphologic and optical properties of InN dots grown by flow-rate modulation epitaxy

碩士 === 國立交通大學 === 電子物理系所 === 100 === In this thesis, we proposed flow-rate modulation epitaxy (FME) to fabricate InN nanostructures. We use FME mode that an alternative supply of group-III and group-V sources to grow InN under 600℃, and growing under low background NH3 flows at 250 sccm during In st...

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Bibliographic Details
Main Authors: Chen, Ying-Chung, 陳膺中
Other Authors: Chen, Wei-Kuo
Format: Others
Language:zh-TW
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/65401544964054371219

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