Growth and Characterizations of Low Temperature GaN Epilayers Using Two-Heater MOCVD Reactor
碩士 === 國立交通大學 === 電子物理系所 === 100 === In this theses, we use the home-made two-heater MOCVD reactor to grow low-growth temperature(850 ℃) GaN (LT-GaN) thin films. The electrical and optical properties of these samples were investigated by Hall, X-ray diffraction and photoluminescence measurements. Ha...
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| Format: | Others |
| Language: | zh-TW |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/94735309950732283879 |
| Summary: | 碩士 === 國立交通大學 === 電子物理系所 === 100 === In this theses, we use the home-made two-heater MOCVD reactor to grow low-growth temperature(850 ℃) GaN (LT-GaN) thin films. The electrical and optical properties of these samples were investigated by Hall, X-ray diffraction and photoluminescence measurements.
Hall measurement results indicate that the optimized V/III ratio of LT-GaN thin films grown by two-heater MOCVD reactor is 10000. The carrier concentration and carrier mobility of LT-GaN thin films is 3.9x1018 cm-3 and 146 cm2/Vs. The LT-photoluminescence (19 K) result shows that the emission is dominated by near band emission.
The X-ray diffraction and temperature dependent Hall measurement (TD-Hall measurement) are employed to confirm the scattering mechanism. The X-ray diffraction spectra show that the dislocation density does not change significantly with the various V/III ratios, implying that the dislocations scattering is insignificant in V/III series of GaN films. The TD-Hall measurements indicate that the native defects scattering is the dominated scattering mechanism.
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