Growth and Characterizations of Low Temperature GaN Epilayers Using Two-Heater MOCVD Reactor
碩士 === 國立交通大學 === 電子物理系所 === 100 === In this theses, we use the home-made two-heater MOCVD reactor to grow low-growth temperature(850 ℃) GaN (LT-GaN) thin films. The electrical and optical properties of these samples were investigated by Hall, X-ray diffraction and photoluminescence measurements. Ha...
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| Format: | Others |
| Language: | zh-TW |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/94735309950732283879 |