| Summary: | 碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 100 === Technology development in the twenty-first century will be surrounded with information processing and power saving. As the technology of semiconductor manufacture grows vigorously, how to save the power efficiently and to process with information quickly, a power-saving and high-capacity electric power-switching device is needed. Therefore, power semiconductor device technology will play a decisive role in the future.
It will be discussed about the issue suffered from the semiconductor manufacture in this research, i.e. the mismatch of threshold voltage roll off behavior between on-silicon and SPICE model in “Asymmetric High Voltage Field Diffused MOSFET” device. However, the matching results between on-silicon and SPImodel is always a very important task and need to be solved in semiconductor industry. In this way, high-efficiency power semiconductor device can be provided to fit and meet the demand of IC designers in circuit and device design.
Therefore, the analysis of root cause by cause-effect diagram will be emphasized in this thesis, in order to find out the true reason of the mismatch in threshold voltage between SPICE model and on-silicon asymmetric FDMOS device. Then through the proper experiment design to confirm the root cause and propose an effective solution further. From the experimental results, it’s shown that the threshold voltage of asymmetric FDMOS device between SPICE model and on-silicon seems to be comparable by the method suggested in this investigation.
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