Development of green material for mask of next generation lithography

• Main Authors: Wu, Cheng-San, 吳政三
• Other Authors: Ko, Fu-Hsiang
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/59790261996414973329

碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 100 === In this thesis, the environment friendly materials, silicon nitride was used to replace general chromium film used for binary mask as well as to replace molydium silicide embedded material for attenuating phase-shifting mask (Att-PSM) in lithography. The optical properties of the nitride film was controlled well by plasma enhanced chemical vapor deposition (PECVD). The film stack with suitable optical properties (3.514, 0.803) and thickness 75.2nm was deposited by PECVD under 50 sccm SiH4 with 5 sccm NH3 gas flow rate for i-line Att-PSM usage. The transmittance of the Att-PSM measured by ultraviolet-visible spectroscopy is about 6％. Topography and roughness were observed and determined by scanning electron microscope and atomic force microscope that is result in 0.32 nm. The infrared absorption spectra of the films were measured to chemical bond variation make sure film content stability by Fouier transform infrared spectroscopy. The atom concentration for silicon nitride obtained here is SiN0.22 using X-ray photoelectron spectroscopy calculation. The capability of resolution was evaluated by i-line stepper exposure. The significant improvement was shown in 0.56μm dense hole patterns more better than the 0.6μm dense hole patterns exposed by binary mask. The powerful proof of a green material for mask of next generation lithography was demonstrated.