Study of Graphene Grown by Low Pressure Chemical Vapor Deposition with Different H2/CH4 Ratio.
碩士 === 國立中央大學 === 物理研究所 === 100 === The purpose of the research was to investigate graphene with different hydrogen flow. Graphene were growth on Copper foil as substrate by Low pressure chemical vapor deposition system with H2 and CH4 as source gases. Graphene were examined by SEM、FTIR and Raman sp...
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| Format: | Others |
| Language: | zh-TW |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/49327398928792931790 |
| Summary: | 碩士 === 國立中央大學 === 物理研究所 === 100 === The purpose of the research was to investigate graphene with different hydrogen flow. Graphene were growth on Copper foil as substrate by Low pressure chemical vapor deposition system with H2 and CH4 as source gases. Graphene were examined by SEM、FTIR and Raman spectroscopy to evaluate their structures and properties. The experimental results show that we successfully growth graphene by LPCVD. When the gas ratio of H2/CH4 = 100 sccm/ 10 sccm, we get the best quality of graphene due to the Oxygen and Hydrogen and CHx the reaction of OH radicals, C and H radicals in the environment of the balancing process to receive a higher quality. From SEM image results reveal that of graphene domains, which has a hexagonal shape on a cooper foils at 100sccm of hydrogen flow. Raman analysis results that gas ratio H2/CH4 = 100 sccm/10 sccm has 30cm-1 of FWHM 2.5 of 2D / G ratio.
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