| Summary: | 碩士 === 國立彰化師範大學 === 光電科技研究所 === 100 === In this study, we report the pentacene-based organic thin film transistor(OTFT) structure with top gate and double gate structure, we have investigate their characteristics and varied their structure to improve their performance.
In first section, we compared the electrical characteristics of bottom-gate and top-gate transistors. Then, through surface modulation and stacking semiconductor layers to improve transistors characteristics. We succeed fabricating a device with a mobility of 1.01×10-3 cm2V-1s-1, a threshold voltage of -8.638 V, a on/off ratio 105,and a SS of 0.746 V/dec. As we know, the small SS suggest a good Semiconductor/Insulator interface. Therefore, the rest issue of top-gate structure could be conducted to contact resistance.
In second section, we fabricated the double gate OTFT structure. We have monitored the function of the top-gate and proposed a suitable explanation for the negative shift of transfer curves for positive and negative top gate bias.
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