The study on the characteristics and fabrication of top gate and double gate p-type organic transistors
碩士 === 國立彰化師範大學 === 光電科技研究所 === 100 === In this study, we report the pentacene-based organic thin film transistor(OTFT) structure with top gate and double gate structure, we have investigate their characteristics and varied their structure to improve their performance. In first section, we compared...
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ndltd-TW-100NCUE56140172015-10-13T21:28:01Z http://ndltd.ncl.edu.tw/handle/23216141369356677597 The study on the characteristics and fabrication of top gate and double gate p-type organic transistors 上閘極和雙閘極P型有機薄膜電晶體之製作與特性研究 boren Lin 林博仁 碩士 國立彰化師範大學 光電科技研究所 100 In this study, we report the pentacene-based organic thin film transistor(OTFT) structure with top gate and double gate structure, we have investigate their characteristics and varied their structure to improve their performance. In first section, we compared the electrical characteristics of bottom-gate and top-gate transistors. Then, through surface modulation and stacking semiconductor layers to improve transistors characteristics. We succeed fabricating a device with a mobility of 1.01×10-3 cm2V-1s-1, a threshold voltage of -8.638 V, a on/off ratio 105,and a SS of 0.746 V/dec. As we know, the small SS suggest a good Semiconductor/Insulator interface. Therefore, the rest issue of top-gate structure could be conducted to contact resistance. In second section, we fabricated the double gate OTFT structure. We have monitored the function of the top-gate and proposed a suitable explanation for the negative shift of transfer curves for positive and negative top gate bias. 王右武 2012 學位論文 ; thesis 92 zh-TW |
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碩士 === 國立彰化師範大學 === 光電科技研究所 === 100 === In this study, we report the pentacene-based organic thin film transistor(OTFT) structure with top gate and double gate structure, we have investigate their characteristics and varied their structure to improve their performance.
In first section, we compared the electrical characteristics of bottom-gate and top-gate transistors. Then, through surface modulation and stacking semiconductor layers to improve transistors characteristics. We succeed fabricating a device with a mobility of 1.01×10-3 cm2V-1s-1, a threshold voltage of -8.638 V, a on/off ratio 105,and a SS of 0.746 V/dec. As we know, the small SS suggest a good Semiconductor/Insulator interface. Therefore, the rest issue of top-gate structure could be conducted to contact resistance.
In second section, we fabricated the double gate OTFT structure. We have monitored the function of the top-gate and proposed a suitable explanation for the negative shift of transfer curves for positive and negative top gate bias.
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王右武 |
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王右武 boren Lin 林博仁 |
author |
boren Lin 林博仁 |
spellingShingle |
boren Lin 林博仁 The study on the characteristics and fabrication of top gate and double gate p-type organic transistors |
author_sort |
boren Lin |
title |
The study on the characteristics and fabrication of top gate and double gate p-type organic transistors |
title_short |
The study on the characteristics and fabrication of top gate and double gate p-type organic transistors |
title_full |
The study on the characteristics and fabrication of top gate and double gate p-type organic transistors |
title_fullStr |
The study on the characteristics and fabrication of top gate and double gate p-type organic transistors |
title_full_unstemmed |
The study on the characteristics and fabrication of top gate and double gate p-type organic transistors |
title_sort |
study on the characteristics and fabrication of top gate and double gate p-type organic transistors |
publishDate |
2012 |
url |
http://ndltd.ncl.edu.tw/handle/23216141369356677597 |
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