Investigation on the AlGaN/GaN High Electron Mobility Transistors

• Main Authors: Lin,BingCian, 林秉謙
• Other Authors: Cheng,ShiouYing
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/75453699608328918033

碩士 === 國立宜蘭大學 === 電子工程學系碩士班 === 100 === In this thesis, the device structure of AlGaN/GaN high electron mobility transistors investigate systematically. There are two typical hemt structure to discuss. One is the thickness and doping of cap layer and barrier layer are major factors to modulate device performance on the undoped hemt. The other thickness and doping of Schottky barrier layer, electron supply layer, and buffer layer are major factors to modulate device performance on the doped HEMT. It also researches the effect of the electrode and polarization on the AlGaN/GaN high electron mobility transistors. We use the TCAD software which is developed by the SILVACO. We based on the Atlas device simulation software to design the elements of AlGaN/GaN high electron mobility transistors. The device with a gate length of 1.4μm and a gate width of 60μm, and the other device with a gate length of 1μm and a gate width of 75μm . We investigate in detail which included energy band, distribution of doping, the characteristic curve of direct current and alternating current. Due to using the material which is AlGaN with big bandgap as Shottky contact layer and Buffer layer, there are advantages such as good carrier confinement capability, uniformly distributed channel carrier, and good shottky character. In addition, the theoretical analysis using the simulation software to investigate the device characteristics, and compare with actual measured results. We can know from the experiment that the result of simulation analysis is consistent with the results of actual measurements. Therefore, it is concluded that the AlGaN/GaN high electron mobility transistors with appropriate structure’s thickness, doping, and polarization offers the promise for microwave device applications.