Investigation on the AlGaN/GaN High Electron Mobility Transistors

Investigation on the AlGaN/GaN High Electron Mobility Transistors

碩士 === 國立宜蘭大學 === 電子工程學系碩士班 === 100 === In this thesis, the device structure of AlGaN/GaN high electron mobility transistors investigate systematically. There are two typical hemt structure to discuss. One is the thickness and doping of cap layer and barrier layer are major factors to modulate devic...

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Bibliographic Details
Main Authors:	Lin,BingCian, 林秉謙
Other Authors:	Cheng,ShiouYing
Format:	Others
Language:	zh-TW
Published:	2012
Online Access:	http://ndltd.ncl.edu.tw/handle/75453699608328918033

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