| Summary: | 碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 100 === In this research, we used the zinc oxide (ZnO) which is die pressed and sintered for studying. We want to know the variations of microstructure and luminescence property when we doped 0.2 mol.% Al2O3 or Li2O to ZnO, or sintered under different atmospheres (high purity oxygen, high purity nitrogen, high purity argon). Using X-ray diffractometry (XRD), scanning electron microscope (SEM), and catholuminescence (CL) spectrometry equipped with a SEM to analyze the different samples. The all six samples’ crystal structure didn’t change via XRD. We investigated for the in-gap-level modification using the CL spectrometry. CL analysis results indicated that ZnO emitted UV light, visible light (blue, green, yellow light), and Near-infrared light emissions. The UV light emission was attributed to the two electronic transitions from the donor level of free exciton and Zn interstitial to valence band. The blue light (2.53 eV) emission was attributed to the donor level of oxygen vacancy-related defect. The green light emission was attributed to the electronic transition from the acceptor level of zinc vacancy-related defect.And the yellow light emission was attributed to the O interstitial and Li-related defects. The Near-infrared light may be attributed to the deep levels recombination.
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